IXYSIXGP12N100AU1IGBT-Chip
Trans IGBT Chip N-CH 1000V 24A 100000mW 3-Pin(3+Tab) TO-220AB
| Compliant | |
| EAR99 | |
| Obsolete |
This fast-switching IXGP12N100AU1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 1000 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |