| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Kanalart | N |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 1200 |
| Max. Gate-Emitter-Spannung (V) | ±20 |
| Typische Kollektor-Emitter-Sättigungsspannung (V) | 2 |
| Max. Kollektordauerstrom (A) | 40 |
| Max. Gate-Emitter-Leckstrom (uA) | 0.1 |
| Max. Leistungsaufnahme (W) | 150 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.82(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| Stiftanzahl | 3 |
You can use this IXGP20N120 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 150000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
