| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | ISOPLUS 247 |
| 3 |
Minimize the current at your gate with the IXGR16N170AH1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 120000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |