Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
N | |
Single | |
2500 | |
±20 | |
2.6 | |
5.5 | |
0.1 | |
32 | |
-55 | |
150 | |
Befestigung | Surface Mount |
Verpackungshöhe | 5.1(Max) |
Verpackungsbreite | 14(Max) |
Verpackungslänge | 16.05(Max) |
Leiterplatte geändert | 2 |
Tab | Tab |
Lieferantenverpackung | TO-268 |
3 |
This IXGT2N250 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.