IXYSIXGT2N250IGBT-Chip

Trans IGBT Chip N-CH 2500V 5.5A 32W 3-Pin(2+Tab) TO-268

This IXGT2N250 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

No Stock Available

Quantity Increments of 1 Minimum 30
  • Ships from:
    Vereinigte Staaten von Amerika
    Manufacturer Lead Time:
    35 Wochen
    • Price: