IXYSIXGX120N60A3IGBT-Chip
Trans IGBT Chip N-CH 600V 200A 780W 3-Pin(3+Tab) PLUS 247
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) mm |
| Verpackungsbreite | 5.21(Max) mm |
| Verpackungslänge | 16.13(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | PLUS 247 |
| Lieferantenverpackung | PLUS 247 |
| 3 | |
| Leitungsform | Through Hole |
Use the IXGX120N60A3 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 780000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |