| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| EA | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.88 |
| Verpackungsbreite | 5.03 |
| Verpackungslänge | 19.91 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | ISOPLUS I4-PAC |
| 3 |
The IXLF19N250A IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 2500 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |