| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
Make an effective common source amplifier using this IXTP01N100D power MOSFET from Ixys Corporation. Its maximum power dissipation is 1100 mW. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |