| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
The IXXH60N65B4 IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 455000 mW. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology. It is made in a single configuration.
| EDA / CAD Models |