| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | SOT-227B |
| 4 |
You won't need to worry about any lagging in your circuit with this IXXN100N60B3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.
| EDA / CAD Models |