IXYSIXXR100N60B3H1IGBT-Chip

Trans IGBT Chip N-CH 600V 145A 400W 3-Pin(3+Tab) ISOPLUS 247

This IXXR100N60B3H1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 400000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.