Semicoa SemiconductorsJANS2N2219AGP BJT
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39
| Not Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
Semicoa Semiconductors has the solution to your circuit's high-voltage requirements with their NPN JANS2N2219A general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |