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Semicoa SemiconductorsJANS2N2907AUAGP BJT
Trans GP BJT PNP 60V 0.6A 4-Pin UA
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.9(Max) mm |
| Verpackungsbreite | 3.93(Max) mm |
| Verpackungslänge | 5.71(Max) mm |
| Leiterplatte geändert | 4 |
| 4 |
This PNP JANS2N2907AUA general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |