Semicoa SemiconductorsJANSR2N3700UBGP BJT
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.42(Max) |
| Verpackungsbreite | 2.74(Max) |
| Verpackungslänge | 3.25(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | Case UB |
| 4 |
Semicoa Semiconductors brings you the solution to your high-voltage BJT needs with their NPN JANSR2N3700UB general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |