Semicoa SemiconductorsJANTX2N4261GP BJT
Trans GP BJT PNP 15V 0.03A 200mW 4-Pin TO-72
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| 15 | |
| 15 | |
| 4.5 | |
| -65 to 200 | |
| 0.15@0.1mA@1mA|0.35@1mA@10mA | |
| 0.03 | |
| 20@30mA@1V|25@1mA@1V|30@10mA@1V | |
| 200 | |
| -65 | |
| 200 | |
| Military | |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-72 |
| 4 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP JANTX2N4261 GP BJT from Semicoa Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |