| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Unknown |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 7 | |
| 1.5@0.5A@5A|3@2A@10A | |
| 1@0.5A@5A|2.5@2A@10A | |
| 10 | |
| 10@5A@2V|30@3A@2V|50@1A@2V|5@10A@2V | |
| 5000 | |
| -65 | |
| 200 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.94(Max) |
| Verpackungsbreite | 25.91(Max) |
| Verpackungslänge | 39.44(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 |
The NPN JANTXV2N3715 general purpose bipolar junction transistor, developed by Aeroflex , is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |