EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | Unknown |
PPAP | Unknown |
PNP | |
Bipolar Power | |
Si | |
Single | |
1 | |
80 | |
80 | |
7 | |
0.4@25mA@250mA|0.6@1.25mA@1A | |
4 | |
10@1A@1V|20@500mA@1V|30@250mA@1V|3@4A@5V|40@100mA@1V | |
3000 | |
-65 | |
200 | |
Military | |
Befestigung | Through Hole |
Verpackungshöhe | 8.64(Max) |
Verpackungsbreite | 17.78 |
Verpackungslänge | 24.43(Max) + 7.36 |
Leiterplatte geändert | 2 |
Tab | Tab |
Standard-Verpackungsname | TO-213-AA |
Lieferantenverpackung | TO-66 |
3 | |
Leitungsform | Through Hole |
The PNP JANTXV2N3741 general purpose bipolar junction transistor, developed by Aeroflex , is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.