STMicroelectronicsL6386ED013TRGate- und Leistungstreibern
Driver 600V 2-OUT High Side/Low Side Half Brdg Non-Inv 14-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.60 | |
| Automotive | No |
| PPAP | No |
| High and Low Side | |
| Non-Inverting | |
| Half Bridge | |
| 2 | |
| Synchronous | |
| IGBT|MOSFET | |
| 2 | |
| 50(Typ) | |
| 30(Typ) | |
| 400 | |
| 150 | |
| CMOS|TTL | |
| 17 | |
| 1.5(Max) | |
| 3.6(Min) | |
| 600(Max) | |
| 0.65 | |
| 750 | |
| -45 | |
| 125 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.65(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 8.75(Max) |
| Leiterplatte geändert | 14 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 14 | |
| Leitungsform | Gull-wing |
Switch between states in a high power transistor by using this L6386ED013TR power driver developed by STMicroelectronics. This device has a maximum propagation delay time of 150 ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device has a maximum of 17 V. This gate driver has an operating temperature range of -45 °C to 125 °C.
| EDA / CAD Models |