STMicroelectronicsLET20030CHF-MOSFETs
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungshöhe | 4.45(Max) |
| Verpackungsbreite | 6.1(Max) |
| Verpackungslänge | 20.57(Max) |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | Case M-243 |
| 3 |
Ideal for radio frequency environments this LET20030C RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 108000 mW. Its maximum frequency is 2000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |