| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 80 | |
| 15 | |
| 10(Min) | |
| 9 | |
| 59@28V | |
| 0.8@28V | |
| 28@28V | |
| 2.5(Min) | |
| 79000 | |
| 59(Typ) | |
| 17.5 | |
| 1000 | |
| 65 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PowerSO-10RF (Formed lead) |
| 3 | |
| Leitungsform | Gull-wing |
Using semiconductor technology, this LET9045 RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |