| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| Stiftanzahl | 3 |
Thanks to Microchip Technology, both your amplification and switching needs can be taken care of with one component: the LND150N3-G power MOSFET. Its maximum power dissipation is 740 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes dmos technology. This N channel MOSFET transistor operates in depletion mode.
