onsemiMBT3904DW1T3GGP BJT

Trans GP BJT NPN 40V 0.2A 150mW 6-Pin SC-88 T/R

Compared to other transistors, the NPN MBT3904DW1T3G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

189 Stück: heute versandbereit

    Total0,12 €Price for 1

    • Service Fee  6,09 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2209+
      Manufacturer Lead Time:
      9 Wochen
      Minimum Of :
      1
      Maximum Of:
      189
      Country Of origin:
      China
         
      • Price: 0,1240 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2209+
      Manufacturer Lead Time:
      9 Wochen
      Country Of origin:
      China
      • In Stock: 189 Stück
      • Price: 0,1240 €