| ECCN (USA) | EAR99 |
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Konfiguration | Array 7 |
| Anzahl von Elementen pro Chip | 7 |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (A) | 0.5 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA |
| Mindestgleichstromverstärkung | 1000@350mA@2V |
| Mindestbetriebstemperatur (°C) | -40 |
| Max. Betriebstemperatur (°C) | 85 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 10(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| Stiftanzahl | 16 |
| Leitungsform | Gull-wing |
Compared to other transistors, the NPN MC1413BDR2G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C. It has a maximum collector emitter voltage of 50 V.
