onsemiMC33152DR2GGate- und Leistungstreibern
Driver 1.5A 2-OUT High Speed Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.60 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Non-Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 36(Typ) | |
| 32(Typ) | |
| 55(Typ) | |
| CMOS|LSTTL | |
| 6.1 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 560 | |
| -40 | |
| 85 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Use the MC33152DR2G power driver from ON Semiconductor in your design to power on and off your gates. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 85 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |