STMicroelectronicsMD2310FXGP BJT
Trans GP BJT NPN 700V 14A 62000mW 3-Pin(3+Tab) ISOWATT218FX Tube
| EAR99 | |
| Obsolete | |
| MD2310FX | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 1500 | |
| 700 | |
| 9 | |
| 1.1@1.75A@7A | |
| 2.5@1.75A@7A | |
| 14 | |
| 6@7A@5V | |
| 62000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.5(Max) |
| Verpackungsbreite | 5.7(Max) |
| Verpackungslänge | 15.7(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | ISOWATT218FX |
| 3 |
Use this versatile NPN MD2310FX GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 62000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |