| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
Compared to traditional transistors, MDD1902RH power MOSFETs, developed by MagnaChip Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 83000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
