onsemiMJ11022GDarlington BJT
Trans Darlington NPN 250V 15A 175000mW 3-Pin(2+Tab) TO-3 Tray
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.37 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
Higher current yields within your circuit is what you will get with ON Semiconductor's NPN MJ11022G Darlington transistor. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 100@15A@5 V. It has a maximum collector emitter saturation voltage of 2@100mA@10A|3.4@150mA@15A V. This Darlington transistor array's maximum emitter base voltage is 50 V, while its maximum base emitter saturation voltage is 3.8@150mA@15A V. Its maximum power dissipation is 175000 mW. This component will be shipped in tray format. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 50 V. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C.
| EDA / CAD Models |