onsemiMJ11032GDarlington BJT
Trans Darlington NPN 120V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 38.86 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-204 |
| 3 |
Higher current yields within your circuit is what you will get with ON Semiconductor's NPN MJ11032G Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3@200mA@25A|4.5@300mA@50A V. This product's maximum continuous DC collector current is 50 A, while its minimum DC current gain is 1000@25A@5 V|400@50A@5V. It has a maximum collector emitter saturation voltage of 2.5@250mA@25A|3.5@500mA@50A V. Its maximum power dissipation is 300000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |