onsemiMJ21194GGP BJT

Trans GP BJT NPN 250V 16A 250000mW 3-Pin(2+Tab) TO-3 Tray

Implement this NPN MJ21194G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250000 mW. The component will be shipped in tray format. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

200 Stück: heute versandbereit

    Total492,14 €Price for 100

    • (100)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2345+
      Manufacturer Lead Time:
      15 Wochen
      Country Of origin:
      Mexiko
      • In Stock: 200 Stück
      • Price: 4,9214 €