| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) mm |
| Verpackungsbreite | 26.67(Max) mm |
| Verpackungslänge | 39.37 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
Implement this NPN MJ802G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200000 mW. The component will be shipped in tray format. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 4 V.
