onsemiMJB42CT4GGP BJT

Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R

The three terminals of this PNP MJB42CT4G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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85 Stück: heute versandbereit

    Total0,67 €Price for 1

    • Service Fee  6,09 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2330+
      Manufacturer Lead Time:
      14 Wochen
      Minimum Of :
      1
      Maximum Of:
      85
      Country Of origin:
      China
         
      • Price: 0,6701 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2330+
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      China
      • In Stock: 85 Stück
      • Price: 0,6701 €