STMicroelectronicsMJD117T4Darlington BJT

Trans Darlington PNP 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R

Are you looking for an amplified current signal in your circuit? The PNP MJD117T4 Darlington transistor from STMicroelectronics yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@2A@3 V|200@4A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

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Quantity Increments of 2500 Minimum 2500
  • Date Code:
    2423+
    Manufacturer Lead Time:
    14 Wochen
    Country Of origin:
    China
    • Price: 0,241 €
    1. 2500+0,241 €