| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
This NPN MJD200G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 1400 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
