Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 2.38(Max) mm |
Verpackungsbreite | 6.22(Max) mm |
Verpackungslänge | 6.73(Max) mm |
Leiterplatte geändert | 2 |
Tab | Tab |
Standard-Verpackungsname | TO-252 |
Lieferantenverpackung | DPAK |
3 | |
Leitungsform | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MJD31T4G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.