onsemiMJD31T4GGP BJT

Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R

ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MJD31T4G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Import TariffMay apply to this part

1.475 Stück: heute versandbereit

    Total0,36 €Price for 1

    • Service Fee  6,09 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2349+
      Manufacturer Lead Time:
      12 Wochen
      Minimum Of :
      1
      Maximum Of:
      1475
      Country Of origin:
      China
         
      • Price: 0,3570 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2349+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 1.475 Stück
      • Price: 0,3570 €