Diodes IncorporatedMJD32CQ-13GP BJT
Trans GP BJT PNP 100V 3A 3900mW Automotive AEC-Q101 3-Pin(2+Tab) TO-252 T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.58 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-252 |
| 3 | |
| Leitungsform | Gull-wing |
The three terminals of this PNP MJD32CQ-13 GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 15000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |