| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Jump-start your electronic circuit design with this versatile PNP MJD32CT4G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |