onsemiMJD44E3T4GDarlington BJT
Trans Darlington NPN 80V 10A 1750mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) |
| Verpackungsbreite | 6.22(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Traditional transistors can produce low current gains. One of ON Semiconductor's NPN MJD44E3T4G Darlington transistors can provide you with the much higher values you need. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@5 V. It has a maximum collector emitter saturation voltage of 1.5@10mA@5A|2@20mA@10A V. This Darlington transistor array's maximum emitter base voltage is 7 V, while its maximum base emitter saturation voltage is 2.5@10mA@5A V. Its maximum power dissipation is 1750 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |