| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the NPN MJD44H11G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |