onsemiMJE15034GGP BJT

Trans GP BJT NPN 350V 4A 2000mW 3-Pin(3+Tab) TO-220AB Tube

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MJE15034G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

1.044 Stück: Versand in vsl. 2 Tagen

    Total1,49 €Price for 1

    • Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2548+
      Manufacturer Lead Time:
      21 Wochen
      Country Of origin:
      China
      • In Stock: 1.044 Stück
      • Price: 1,4901 €

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