onsemiMJE15034GGP BJT

Trans GP BJT NPN 350V 4A 2000mW 3-Pin(3+Tab) TO-220 Rail

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MJE15034G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

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  • Manufacturer Lead Time:
    14 Wochen
    Country Of origin:
    China
    • Price: 0,6397 €
    1. 50+0,6397 €
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    3. 500+0,5274 €
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