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onsemiMJE182GGP BJT
Trans GP BJT NPN 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) mm |
| Verpackungsbreite | 3(Max) mm |
| Verpackungslänge | 7.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN MJE182G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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