| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) mm |
| Verpackungsbreite | 3(Max) mm |
| Verpackungslänge | 7.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Compared to other transistors, the NPN MJE200G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V.
| EDA / CAD Models |