Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC ĂĽberschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Through Hole |
Verpackungshöhe | 9.28(Max) mm |
Verpackungsbreite | 4.83(Max) mm |
Verpackungslänge | 10.53(Max) mm |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
Design various electronic circuits with this versatile PNP MJE5731AG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 375 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |