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onsemiMJE800GDarlington BJT
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) |
| Verpackungsbreite | 3(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Increase the current gain in your circuit by using ON Semiconductor's NPN MJE800G Darlington transistor. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@1.5A@3V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |