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onsemiMJE800GDarlington BJT
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Compliant | |
EAR99 | |
Obsolete | |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
60 | |
60 | |
5 | |
4 | |
100 | |
0.1 | |
-55 to 150 | |
2.5@30mA@1.5A|3@40mA@4A | |
750@1.5A@3V|100@4A@3V | |
40000 | |
-55 | |
150 | |
Box | |
<500|500 to 3600 | |
Befestigung | Through Hole |
Verpackungshöhe | 11.1(Max) |
Verpackungsbreite | 3(Max) |
Verpackungslänge | 7.8(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-225 |
3 | |
Leitungsform | Through Hole |
Increase the current gain in your circuit by using ON Semiconductor's NPN MJE800G Darlington transistor. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@1.5A@3V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.