| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Typ | PNP |
| Kategorie | Bipolar Power |
| Material | Si |
| Konfiguration | Single |
| Anzahl von Elementen pro Chip | 1 |
| Max. Kollektor-Emitterspannung (V) | 90 |
| Max. Emitter-Basis-Spannung (V) | 5 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 1@0.4A@4A|2.5@3.3A@10A |
| Max. DC-Kollektorstrom (A) | 10 |
| Max. Kollektorsperrstrom (nA) | 1000 |
| Mindestgleichstromverstärkung | 20@4A@4V|5@10A@4V |
| Max. Leistungsaufnahme (mW) | 2000 |
| Max. Übergangsfrequenz (MHz) | 2(Min) |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tube |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.12(Max) |
| Verpackungsbreite | 4.9(Max) |
| Verpackungslänge | 10.63(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MJF2955G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
