onsemiMJF3055GGP BJT

Trans GP BJT NPN 90V 10A 2000mW 3-Pin(3+Tab) TO-220FP Tube

Implement this NPN MJF3055G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

90 Stück: heute versandbereit

    Total0,86 €Price for 1

    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2330+
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      Südkorea
      • In Stock: 90 Stück
      • Price: 0,8631 €