onsemiMJH11017GDarlington BJT
Trans Darlington PNP 150V 15A 150000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 150 | |
| 150 | |
| 5 | |
| 3.8@150mA@15A | |
| 15 | |
| 2.5@100mA@10A|4@150mA@15A | |
| 100@15A@5V|400@10A@5V | |
| 150000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Amplify your current using ON Semiconductor's PNP MJH11017G Darlington transistor in order to yield a higher current gain. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 100@15A@5 V|400@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@100mA@10A|4@150mA@15A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.8@150mA@15A V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |