onsemiMJH11019GDarlington BJT
Trans Darlington PNP 200V 15A 150000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
ON Semiconductor brings you their latest PNP MJH11019G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 100@15A@5 V|400@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@100mA@10A|4@150mA@15A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.8@150mA@15A V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |