onsemiMJH11020GDarlington BJT
Trans Darlington NPN 200V 15A 150000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Do you need a device that can yield much higher current gains? Thanks to ON Semiconductor, the NPN MJH11020G Darlington transistor can amplify a current to meet your needs. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.8@150mA@15A V. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 100@15A@5 V|400@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@100mA@10A|4@150mA@15A V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |