onsemiMJH6287GDarlington BJT
Trans Darlington PNP 100V 20A 160000mW 3-Pin(3+Tab) TO-247 Tube
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
PNP | |
Single | |
1 | |
100 | |
100 | |
5 | |
4@200mA@20A | |
20 | |
2@40mA@10A|3@200mA@20A | |
4(Min) | |
100@20A@3V|750@10A@3V | |
160000 | |
-65 | |
150 | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 21.08(Max) |
Verpackungsbreite | 5.3(Max) |
Verpackungslänge | 16.26(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-247 |
3 | |
Leitungsform | Through Hole |
ON Semiconductor brings you their latest PNP MJH6287G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 20 A, while its minimum DC current gain is 100@20A@3 V|750@10A@3V. It has a maximum collector emitter saturation voltage of 2@40mA@10A|3@200mA@20A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@200mA@20A V. Its maximum power dissipation is 160000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.