| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Kanalart | P |
| Konfiguration | Single |
| Max. Gate-Source-Spannung (V) | -25 |
| Max. Drain-Gate-Spannung (V) | 25 |
| Max. Leistungsaufnahme (mW) | 225 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Drain-Mindestsättigungsstrom (mA) | 1.5 |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
The MMBFJ177LT1G JFET transistor, developed by ON Semiconductor, can give you a high level of input resistance, perfect for controlling input voltage. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
