onsemiMMBT2907AWT1GGP BJT

Trans GP BJT PNP 60V 0.6A 150mW 3-Pin SC-70 T/R

Jump-start your electronic circuit design with this versatile PNP MMBT2907AWT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

Auf Lager: 165.000 Stück

Regional Inventory: 144.000

    Total54,00 €Price for 3000

    144.000 auf Lager: heute versandbereit

    • (3000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2412+
      Manufacturer Lead Time:
      10 Wochen
      Country Of origin:
      China
      • In Stock: 144.000 Stück
      • Price: 0,0180 €
    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2452+
      Manufacturer Lead Time:
      10 Wochen
      Country Of origin:
      China
      • In Stock: 21.000 Stück
      • Price: 0,0200 €